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Domestic Conference - 2014 - 1. S-M Kim, J-H Choi, S-H Jang, J-S Jang “High-performance GaN-based light-emitting diodes using ZnO transparent conducting and PdAl-based p-bonding electrodes”, 제 9회 LED반도체조명학회, February 18-19, 2014 [구두발표논문상] - 2013 - 4. S-M Kim, S-H Jang, J-S Jang “AlPd-based ohmic contact to ZnO transparent conducting oxide for GaN-based LEDs”, 2013 Material Research Society(2013 MRS ) , December 1-6, 2013 3. S-H Jang, S-M Kim, Y-W Lee, J-H Choi, S-H Lim, J-H Kim, Y-H Cho, J-S Jang “Properties of zinc oxide nanorods and nanowire grown by different growth mechanism and different substrate at low temperature ”, 2013 Material Research Society(2013 MRS ) , December 1-6, 2013 2. S-M Kim, S-H Jang, S-H Lee, J-S Jang “High-performance GaN-based light-emitting diodes using ZnO transparent conducting electrode and PdAl-based p-bonding electrodes”, International Conference on Advanced Electromaterils(ICAE 2013) , November 12~15, 2013 1. S-H Jang, S-M Kim, Y-W Lee, J-H Choi, M-S Moon, J-H Woo, J-S Jang “Metal contacts to catalysis-free ZnO nanorods grown on p-type GaN using a thermal chemical vapor deposition”, International Conference on Advanced Electromaterils(ICAE 2013) , November 12~15, 2013 [Best Poster Award] - 2012 - 4. S-H Jang, Y-W Lee, S-M Kim, J-S Jang, T-H Jeong “Multi-complex 1-2D single-crystalline ZnO nanostructure on substrate formed by thermal vapor liquid solid method”, 2012 Material Research Society(2012 MRS ) , November 26, 2012 3. J-H Choi, S-H Jang, J-S Jang “Electrical, optical and structural characteristics of ohmic contacts between p-GaN and ITO deposited by DC- and RF-based magnetron sputtering methods ”, 2nd International Conference on Electronic Materials and Nanotechnology for Green Enviroment (ENGE 2012) , Sep. 16~19, 2012 2. H-K Lee, J-W Park, S-H Jang, J-S Jang “Influence of Die-Adhesive Materials on Device Performance and Thermal Flow Characteristics of Light-Emitting Diode Packaging”, 2nd International Conference on Electronic Materials and Nanotechnology for Green Enviroment (ENGE 2012) , Sep. 16~19, 2012 1. S-H Jang, Y-W Lee, S-M Kim, J-S Jang “MgZnO:Ga-based transparent ohmic electrodes on p-type GaN”, 9th International Symposium on semiconductor light emitting diodes(2012 ISSLED ) , July 26, 2012 - 2011 - 13. S-M Kim, S-H Jang, J-S Jang “High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reversed-connected Schottky diode and a Mg-delta droped p-GaN”, Frontiers of optoelectronics, December 28, 2011 12. S-H Jang, S-M Kim, J-S Lee, J-S Jang “High-Performance GaN-based Light-Emitting diodes with ZnO Nanorods”, Materials Research Society(MRS 2011), November 28, 2011 11. M-S Moon, O-S Kwon, J-H Seo, J-S Jang “Improvement in Driving Efficiency and Luminance Uniformity of LED Lighting Systems using a RLC Regulation and a Snubber”, International Conference on Advanced Electromaterils(ICAE 2011), November 7~10, 2011 10. S-M Kim, S-H jang, J-C kim, J-S Jang, J-H baek “New Approaches for Blocking Surface Leakage Current of High Power Light-emitting Diodes”, International Conference on Advanced Electromaterils(ICAE 2011), November 7~10, 2011 9. S-H Jang, S-M Kim, J-S Lee, J-C Kim, M-J Park, J-S Jang “Enhancement of Photon Extraction in ZnO-nanorod Embedded GaN-based LEDs”, International Conference on Advanced Electromaterils(ICAE 2011), November 7~10, 2011 8. S-H Jang, S-M Kim, J-S Jang “Carrier Transport Mechanism at the Interface between Metals and p-type IIInitrides Having Different Surface Electronic Structure”, International Conference on Advanced Electromaterils(ICAE 2011), November 7~10, 2011 7. Y-W Lee, S-H Jang, S-M Kim, J-S Jang “Effects of Ga-doped MgZnO Transparency Conductive Oxide Film Appied to GaN-based LEDs”, International Conference on Advanced Electromaterils(ICAE 2011), November 7~10, 2011 6. J-S Lee, S-H Jang, S-M Kim, J-S Jang “Different Nanorod Structure Controlled by Surface Condition of ITO”, International Conference on Advanced Electromaterils(ICAE 2011), November 7~10, 2011 5. O-S Kwon, M-S Moon, J-H Seo, J-S Jang “A New Boost Type Control Method for High Dimming Frequency and Fast Response Time of the Inductor Current in the LED Lightings”, International Conference on Advanced Electromaterils(ICAE 2011), November 7~10, 2011 4. J-C Kim, M-J Park, S-H Jang, S-M Kim, H-K Lee, J-S Jang “Acceleration Life-time Analysis Related with Junction Temperature of GaN-based Light Emitting Diodes”, International Conference on Nitride Semiconductors(ICNS 2011), October 12, 2011 3. M-J Park, J-C Kim, S-M Kim, S-H Jang, J-S Jang “Failure mechanisms of lateral flow types of InGaN-GaN MQWs Light-Emitting Diodes”, International Conference on Nitride Semiconductors(ICNS 2011), July 13, 2011 2. M-J Park, J-C Kim, S-M Kim, S-H Jang, J-S Jang “Carrier profiling and Failure mechanism for electrostatic discharge of GaN-based blue light-emitting diodes”, International Conference on Nitride Semiconductors(ICNS 2011), July 13, 2011 1. S-M Kim, J-S Jang, S-M Kim, S-J Lee, J-H Baek “High-performance GaN-based flip-chip light-emitting diodes using an AlCu-based reflector”, International Conference on Nitride Semiconductors(ICNS 2011), July 11, 2011 - 2010 - 4. M-J Park, J-C Kim, S-M Kim, S-H Jang, J-S Jang, I-K Park “Origin of degradation mechanism for current crowding effect of p-bonding electrode resistivity of GaN-based LEDs on reliability characteristics”, International Workshop on Nitride Semiconductor(IWN 2010), September 21, 2010 3. S-M Kim, S-H Jang, J-S Jang, S-H Lee, S-H Jung, J-H Baek “Improvement of lateral current spresding and reverse leakage current for Schottky diode-integrated GaN-based LEDs”, International Workshop on Nitride Semiconductor(IWN 2010), September 21, 2010 2. J-S Jang “High-efficiency and excellent-reliability III-nitrides lightemitting diodes using integration technology”, 2010 DSSL Feb 3~5 1. J-S Jang “Strategy and innovative goals for the development of LED-IT fusion technologies based on advanced automotive and lighting applications in Korea”, 2010 DSSL Feb 3~5 - 2009 - 4. Sun-Ho Jang, J-S Jang "High-quality Ti-based Schottky Contacts to p-type GaN" , Department of ECE, 2009 December 1 3. J-S Jang “High-efficiency Schottky Diode-integrated GaN-based Light-emitting Diodes”, 2009 Materials Research Society, Boston, MA, November 30∼December 4, 2009 2. S-H Jang ,and J-S Jang “High-quality Ti-based Schottky Contacts to p-type GaN”, 2009 Materials Research Society, Boston, MA, November 30∼December 4, 2009 1. S-M Kim , Y-B Moon, and J-S Jang “Origin of Degradation Mechanism for Patterned Sapphire Substrate-Based Blue Light Emitting Diodes”, 8th International Conference on Nitride Semiconductors, Jeju, Korea, October 18∼23,2009/Icc Jeju. - ~ 2005 - 24. H-H
Lee and J-S Jang, “Structural
properties and interfacial reactions of ITO thin films on InGaN/p-GaN”,
4th International Conference on Advanced Materials and Devices (ICAMD’05),
23. J-S Jang, S-H Choo, H-H Jung, S-H Lee, H-H Lee, B-H Park, K-C Song, Y-M Yoo, Y-S Park, M-S Hang, and J-J Jung, “High power and high efficiency InGaN/GaN flip-chip LED ”, International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, 15-19 March 2004, pp. 32. 22. J-R Lee, S-I Na, J-H Jeong, S-N Lee, J-S Jang, S-H Lee, J-J Jung, J-O Song, T-Y Seong, and S-J Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for flip-chip GaN-based light-emitting diode”, International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, 15-19 March 2004, pp. 69. 21. J-S Jang, S-H Choo, H-H Lee, P-H Park, and J-J Jung, “New metallization schemes for the high reflectance, low-resistance, and thermally stable ohmic contacts on p-GaN”, International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, 15-19 March 2004, pp. 86. 20. H-H Lee, J-S Jang, J-J Jung, S-J Park, and D-Y Noh, “Structural and compositional characterization of AlGaN/AlN/Si (111) thin films”, International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, 15-19 March 2004, pp.269. 19. J-H Jeong, S-N Lee, J-R Lee, S-I Na, J-S Jang, S-H Lee, and S-J Park, “Improvement of InGaN-based flip-chip light emitting diode using diffusion barrier between ohmic and reflector layers”,International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, 15-19 March 2004, pp. 258. 18. S-H Lee, H-K Son, S-J Kim, H-H Jeong, J-S Jang, J-J Jung, S-H Lee, T-H Kim, and Y-M Yoo, "High brightness GaN-based light-emitting diode using ITO/n+-InGaN/InGaN superlattice/n+-GaN/p-GaN tunneling junction”. International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, 15-19 March 2004, pp. 279. 17. J-S Jang, S-J Park, and T-Y Seong, “High quality ohmic contacts to GaN for high performance optical devices”, International Workshop on Nitride Semiconductors (IWN 2002), Achen, Germany, 22-25 July 2002. 16. C-W Lee, J-S Jang, S-J Park, and T-Y Seong, “Low resistance Ti-based ohmic contacts to surface-treated n-type InGaN”, International Conference on Nitride Semiconductors (ICNS), Denver, Colorado USA, 16-20 July 2001. 15. J-S Jang, C-W Lee, S-J Park, and T-Y Seong, “Low resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN”, Electronic Materials Conference (EMC2001), Notre Dame, Indiana, 27-29 June 2001. 14. J-S Jang, H-S Kim, S-W Kim, J-M Lee, S-J Park, H-H Hwang, and T-Y Seong, “The improvements in the electrical and optical performance of InGaN/GaN multiple quantum well light-emitting diodes by two-step surface treatment”, Materials Research Society Conference, Boston, MA, Nov. 27 – Dec. 1, 2000, pp. 181. 13. J-S Jang, S-H Han, D-J Kim, S-J Park, and T-Y Seong, “Low resistance and thermally stable ohmic contacts to p-type GaN”, Materials Research Society Conference, Boston, MA, Nov. 27 – Dec. 1, 2000, pp. 180. 12. J-S Jang, S-J Park, and T-Y Seong, “Lowest resistance ohmic contacts to p-type GaN using Pt/Ru schemes”, ISBLLED 2000, Berlin, Germany, 6-10 March, 2000. 11. J-S Jang, S-H Han, D-J Kim, S-J Park, and T-Y Seong, “Low resistance and thermally stable Ru-based ohmic contacts to Mg-doped GaN”, the 10th Seoul International Symposium on Physics and Semiconductors (ISPSA 2000), Jeju, Korea, 1-3 Nov. 2000, pp.32. 10. C-W Lee, J-S Jang, T-Y Seong, and S-J Park, “Low resistance Ti-based ohmic contacts to Si-doped InGaN”, ISPSA 2000, Jeju, Korea, 1-3 Nov. 2000. pp.266. 9. J-S Jang, S-H Han, S-W Kim, S-J Park, and T-Y Seong, “Formation of low-resistance, thermally stable, and transparent Pt-based ohmic contacts to surface-treated p-GaN”, IPAP Conference Ser. 1, 805 (2000). 8. S-H
Han, J-S Jang, and T-Y Seong, “Ni-based ohmic contacts to
surface-treated p-GaN”, Tech. Digest of Inter. Workshop on Nitride semiconductors, 7. J-S Jang, H-K Kim, S-J Park, and T-Y Seong, “Formation of high quality Pt ohmic contacts to p-type GaN using two-step surface treatment”, Materials Research Society Conference, Boston, MA, 29 Nov. – 3 Dec., 1999. 6. C Huh, D-J Kim, Y-T Moon, H-S Kim, S-W Kim, J-S Jang, T-Y Seong, and S-J Park, “Fabrication of GaN blue LED with multi-quantum well structure”, the 1st NRCT-KOSEF Joint Seminar on Semicond., Bangkok, Thiland, 30 Nov.-1 Dec., 1999, pp. 82-86. 5. J-S
Jang, H-K Kim, S-J Park, and T-Y Seong, “High
quality nonalloyed Pt ohmic contacts to p-type GaN using various surface treatment”, Proc. Of 4. H-S Oh, J-S Jang, H-K Kim, S-J Park, and T-Y Seong, “Low resistance and thermally stable Pt/W/Au ohmic contacts to p-type GaN”, Proc. of Solid State Devices and Materials, Tokyo, Japan, 21-24 Sept., 1999, pp. 220. 3. H-K
Kim, J-S Jang, T-Y Seong, S-H Lee, and S-J Park, “Interfacial
reactions between Ti, Al, or Ti/Al metallization schemes and n-GaN”,
Proc. of 2nd ISBLLED, 2. J-S
Jang, I-S Chang, T-Y Seong, and S-J Park, “Ohmic
contacts to p-GaN using Ni/Pt/Au and Pt/Ni/Au metallization schemes”,
Proc. of 2nd ISBLLED, 1. J-S Jang, H-G Kim, C-S Um, K-H Park, I-K Han, S-H Kim, and S-J Park, “Formation of Ni/Pt/Au ohmic contacts to p-GaN”, Mater. Res. Soc. Proc. 482, 1053 (1998). |